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this is information on a product in full production. june 2013 docid024771 rev 1 1/18 stf6n60m2, stp6n60m2, STU6N60M2 n-channel 600 v, 1.06 typ., 4.5 a mdmesh ii plus? low q g power mosfet in to-220fp, to-220 and ipak packages datasheet - production data figure 1. internal schematic diagram features ? extremely low gate charge ? lower r ds(on) x area vs previous generation ? low gate input resistance ? 100% avalanche tested ? zener-protected applications ? switching applications description these devices are n-channel power mosfets developed using a new generation of mdmesh? technology: mdmesh ii plus? low q g . these revolutionary power mosfets associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. they are therefore suitable for the most demanding high efficiency converters. to-220 to-220fp ipak 1 2 3 tab 3 2 1 tab 1 2 3 am15572v1 , tab order codes v ds @ t jmax r ds(on) max i d stf6n60m2 650 v 1.2 4.5 a stp6n60m2 STU6N60M2 table 1. device summary order codes marking package packaging stf6n60m2 6n60m2 to-220fp tube stp6n60m2 to-220 STU6N60M2 ipak www.st.com
contents stf6n60m2, stp6n60m2, STU6N60M2 2/18 docid024771 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
docid024771 rev 1 3/18 stf6n60m2, stp6n60m2, STU6N60M2 electrical ratings 18 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220fp to-220, ipak v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 4.5 (1) 1. limited by maximum junction temperature. 4.5 a i d drain current (continuous) at t c = 100 c 2.9 (1) 2.9 a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 18 (1) 18 a p tot total dissipation at t c = 25 c 20 60 w v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s; t c =25 c) 2500 v dv/dt (3) 3. i sd 4.5 a, di/dt 400 a/s; v ds peak < v (br)dss , v dd =400 v peak diode recovery voltage slope 15 v/ns dv/dt (4) 4. v ds 480 v mosfet dv/dt ruggedness 50 t stg storage temperature - 55 to 150 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit to-220fp to-220 ipak r thj-case thermal resistance junction-case max 6.25 2.08 c/w r thj-amb thermal resistance junction-ambient max 62.5 100 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 1a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 86 mj
electrical characteristics stf6n60m2, stp6n60m2, STU6N60M2 4/18 docid024771 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v 1 a v ds = 600 v, t c =125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 2.25 a 1.06 1.2 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 -232-pf c oss output capacitance - 14 - pf c rss reverse transfer capacitance -0.7-pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v ds = 0 to 480 v, v gs = 0 - 71 - pf r g intrinsic gate resistance f = 1 mhz open drain - 6.5 - q g total gate charge v dd = 480 v, i d = 4.5 a, v gs = 10 v (see figure 18 ) -8-nc q gs gate-source charge - 1.7 - nc q gd gate-drain charge - 4 - nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 300 v, i d = 1.65 a, r g = 4.7 , v gs = 10 v (see figure 17 and figure 22 ) -9.5-ns t r rise time - 7.4 - ns t d(off) turn-off delay time - 24 - ns t f fall time - 22.5 - ns
docid024771 rev 1 5/18 stf6n60m2, stp6n60m2, STU6N60M2 electrical characteristics 18 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 4.5 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 18 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 4.5 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 4.5 a, di/dt = 100 a/s v dd = 60 v (see figure 19 ) - 274 ns q rr reverse recovery charge - 1.47 nc i rrm reverse recovery current - 10.7 a t rr reverse recovery time i sd = 4.5 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 19 ) - 376 ns q rr reverse recovery charge - 1.96 nc i rrm reverse recovery current - 10.5 a
electrical characteristics stf6n60m2, stp6n60m2, STU6N60M2 6/18 docid024771 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220fp figure 3. thermal impedance for to-220fp i d 1 0.1 0.01 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms tj=150c tc=25c single pulse 10 10ms 100 am15886v1 figure 4. safe operating area for to-220 figure 5. thermal impedance for to-220 i d 1 0.1 0.01 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms tj=150c tc=25c single pulse 10 10ms 100 am15885v1 figure 6. safe operating area for ipak figure 7. thermal impedance for ipak i d 1 0.1 0.01 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms tj=150c tc=25c single pulse 10 10ms 100 am15875v1
docid024771 rev 1 7/18 stf6n60m2, stp6n60m2, STU6N60M2 electrical characteristics 18 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on-resistance figure 12. capacitance variations figure 13. normalized v ds vs temperature i d 3 2 1 0 0 10 v ds (v) (a) 5 4 v gs = 4 v v gs = 5 v v gs = 8, 9, 10 v 5 v gs = 6 v v gs = 7 v 6 8 15 20 7 am15876v1 i d 3 2 1 0 0 2 v gs (v) 4 (a) 4 6 v ds = 20 v 8 5 6 7 10 8 am15877v1 v gs 6 4 2 0 0 2 q g (nc) (v) 8 4 6 10 v dd =480v 8 12 i d =4.5v v ds 300 200 100 0 400 500 v ds (v) am15878v1 r ds(on) 1.060 1.040 1.020 0 3 i d (a) ( ) 1 1.080 1.100 2 4 v gs =10v 1.120 am15879v1 c 100 10 1 0.1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 1000 am15880v1 v ds -50 t j (c) (norm) -25 50 0 25 75 0.93 0.95 0.97 1.03 1.05 1.07 100 0.99 1.01 1.09 1.11 i =1 ma d am15881v1
electrical characteristics stf6n60m2, stp6n60m2, STU6N60M2 8/18 docid024771 rev 1 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on-resistance vs temperature figure 16. source-drain diode forward characteristics v gs(th) 0.8 0.7 -50 t j (c) (norm) -25 0.9 50 0 25 75 100 i d =250 a 1.1 1.0 am15882v1 r ds(on) 0.9 0.7 0.5 -25 t j (c) -50 0 1.1 i d =2.2 a 25 50 75 1.3 (norm) 100 1.5 1.7 1.9 2.1 2.3 am15883v1 v sd 0 2 i sd (a) (v) 1 3 0 0.2 0.4 0.6 0.8 t j =-50c t j =150c t j =25c 4 1.2 1 1.4 am15884v1
docid024771 rev 1 9/18 stf6n60m2, stp6n60m2, STU6N60M2 test circuits 18 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive waveform figure 22. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data stf6n60m2, stp6n60m2, STU6N60M2 10/18 docid024771 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid024771 rev 1 11/18 stf6n60m2, stp6n60m2, STU6N60M2 package mechanical data 18 table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
package mechanical data stf6n60m2, stp6n60m2, STU6N60M2 12/18 docid024771 rev 1 figure 23. to-220fp drawing 7012510_rev_k_b
docid024771 rev 1 13/18 stf6n60m2, stp6n60m2, STU6N60M2 package mechanical data 18 table 10. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data stf6n60m2, stp6n60m2, STU6N60M2 14/18 docid024771 rev 1 figure 24. to-220 type a drawing bw\sh$b5hyb7
docid024771 rev 1 15/18 stf6n60m2, stp6n60m2, STU6N60M2 package mechanical data 18 table 11. ipak (to-251) mechanical data dim mm. min. typ. max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.30 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 e 6.40 6.60 e 2.28 e1 4.40 4.60 h 16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10
package mechanical data stf6n60m2, stp6n60m2, STU6N60M2 16/18 docid024771 rev 1 figure 25. ipak (to-251) drawing 0068771_k
docid024771 rev 1 17/18 stf6n60m2, stp6n60m2, STU6N60M2 revision history 18 5 revision history table 12. document revision history date revision changes 11-jun-2013 1 first release.
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